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| BFR949L3 NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 9 GHz F = 1.0 dB at 1 GHz 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR949L3 Maximum Ratings Parameter Marking RK 1=B Pin Configuration 2=E 3=C Package TSLP-3-1 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 10 20 20 1.5 35 4 250 150 -65 ... 150 -65 ... 150 Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Ambient temperature Storage temperature TS 100C 1) mA mW C Thermal Resistance Junction - soldering point 2) RthJS 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance tbd K/W 1 Aug-09-2001 BFR949L3 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 6 V hFE 100 140 200 IEBO 0.1 A ICBO 100 nA ICES 100 A V(BR)CEO 10 V Symbol min. Values typ. max. Unit 2 Aug-09-2001 BFR949L3 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 15 mA, VCE = 6 V, f = 1 GHz Collector-base capacitance VCB = 10 V, f = 1MHz Collector-emitter capacitance VCE = 10 V, f = 1MHz Emitter-base capacitance VEB = 0.5 V, f = 1MHz Noise figure IC = 5 mA, VCE = 6 V, ZS = ZSopt , f = 1 GHz IC = 3 mA, VCE = 8 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum stable 1) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Power gain, maximum available 2) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Transducer gain IC = 15 mA, VCE = 6 V, ZS = ZL = 50 , f = 1 GHz IC = 10 mA, VCE = 8 V, ZS = ZL = 50 , f = 1.8 GHz 1G ms = |S21 / S12 | 2G 2 1/2 ma = |S21 / S12 | (k-(k -1) ) Unit max. dB GHz pF typ. 9 0.25 0.15 0.7 fT Ccb Cce Ceb F 7 - Gms - 1 1.5 21.5 2.5 - Gma - 15.5 - |S21e|2 14 17 12 - 3 Aug-09-2001 |
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